Syllabus

Lecture 1: Introduction and Orientation

Lecture 2:  Overview of Electronic Materials

Lecture 3:  Free electron Fermi gas

Lecture 4:  Energy bands

Lecture 5: Carrier Concentration in Semiconductors

Lecture 6: Shallow dopants and Deep-level traps

Homework 1

Lecture 7: Silicon Materials

Lecture 8: Oxidation

Lecture 9: Doping

Lecture 10: Drift and diffusion

Lecture 11: Generation and recombination

Homework 2

Lecture 12: Electrostatics of p-n junctions (I)

Lecture 13: Electrostatics of p-n junctions (II)

Lecture 14: Current Voltage Characteristics of p-n Junctions

Lecture 15: Metal Semiconductor interface and Schottky Diode

Lecture 16: Lithography I: Basics and Photoresist Chemistry

Lecture 17: Lithography II: EUV and Novel Patterning Techniques

Homework 3

Lecture 18: Etching Overview

Lecture 19: Wet Etching

Lecture 20: Dry Etching

Lecture 21: Mid-term Review

Lecture 22: Light Emitting Diodes

Lecture 23: LED Materials

Lecture 24: Physics of Solar Cells

Homework 4

Lecture 25: Mid-term Exam

Lecture 26: Solar cell-Materials (I)

Lecture 27: Solar cell-Materials (II)

Lecture 28: Materials Deposition: PVD

Lecture 29: Materials Deposition: CVD (I)

Lecture 30: Materials Deposition: CVD (II)

Homework 5

Lecture 31: Transparent Conductive Oxide

Lecture 32: Electrostatics of MOS Capacitor

Lecture 33: C-V Characteristics of MOS Capacitor

Lecture 34: Operation of MOSFET

Lecture 35: Subthreshold Region of MOSFET And Device Scaling

Lecture 36: Velocity Saturation

Lecture 37: Short channel effects

Homework 6

Lecture 38: Non-ideal semiconductor-gate dielectric interface

Lecture 39: High-k/metal gate

Lecture 40: 3D Channel and New Channel Materials for MOSFETs

Lecture 41: Fabrication Flow of Si MOSFETs

Lecture 42: Electrodeposition

Lecture 43: Final Review

Final exam